Walkout in PHEMTs: Origin and Relation to Device Structure

S. Solodky1, T. Baksht1, A. Kramtsov2, M. Vazokha1, A. Stopel1, I. Lusetsky1, M.Leibovitch2, G. Bunin2 and Yorman Shapira1

1 Department of Electrical Engineering Physical Electronics, Tel-Aviv University, Ramat-Aviv 69978, Israel

2 Gal-El (MMIC), P.O. Box 330, Ashdod 77102, Israel

3 Engineering Faculty, Ben-Gurion University, Beer-Sheva, 84105, lIsrael

E-mail: baksht@post.tau.ac.il; Fax: 972-3-6423508 Phone: 972-3-6408015,


Keywords : HEMT, walkout, device design, impact ionization, empirical modeling



Parameter walkout of more than 250 power Al0.24Ga0.76As/In0.25Ga0.75As/GaAs double-recessed PHEMTs with different layout geometry and epitaxial structure has been experimentally measured and simulated. The relation between DC, small-signal and large-signal behavior has been recognized. The essential parameters of walkout were defined; their geometry and structural dependence have been derived. Possible methods of walkout control are discussed.


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