Continuous Defectivity Improvements and Impact on High Density Metal-Insulator-Metal

James Cotronakis, Martin Clarke, Ray Lawrence, Jan Campbell, Craig Gaw

Motorola Compound Semiconductor One: CS-1

2100 East Elliot Road, MD: EL609, Tempe, AZ  85284

Phone: (480) 413-5964, FAX: (480)413-5748, Email;

Phone: (480) 413-3419, FAX: (480)413-5748, Email;

Phone: (480) 413-3631, FAX: (480)413-5748, Email;

Phone: (480) 413-7472, FAX: (480)413-5748, Email;

Phone: (480) 413-5920, FAX: (480)413-5723, Email;


Keywords: HDMIM, Capacitor, Defectivity, Yield, Tantalum, Metal



Motorola’s continuous improvement methodology and focus on directivity has paid significant dividends in the form of record wafer yields and in particular record High Density Metal-Insulator-Metal (HDMIM) capacitor yields.  The institution of a defectivity program has identified defect generators within the process flow and efforts to reduce defectivity at the sputtered layer of the bottom plate and evaporate layer of the top plate HDMIM capacitor formation are reported.  Addition of process controls at both the bottom and top late processes to monitor and reduce defectivity are discussed.  These process controls include, the modification of a MRC sputter tool, chemical clean of incoming Au pellets and the addition of tantalum to the gold for the evaporation process.  A ten time improvement in defect reduction at the bottom and to plate of HDMIM capacitor has been realized and the impact on yields is reported.  The reductions in defectivity have allowed Motorola’s CS1 to calculate intrinsic reliability in excel of our corporate goal.


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