Observations of Current Blocking in InP/GaAsSb DHBTs

Benjamin F. Chu-Kung, Shyh-Chiang Shen*, Walid Hafez, and Melton Feng

Department of Electrical and Computer Engineering University of Illinois

Micro and Nanotechnology Laboratory 208 N. Wright Street, Urbana, IL 61801

Phone: (217)333-4048, e-mail chukung@uiuc.edu

*Xindium Technologies, Inc., 100 GTrade Centre Drive, Suite 304, Champaign, IL 61820


Keywords : HBT, InP, GaAsSb, Current Blocking



Type II InP/GaAsSb transistors have attracted much interest in high speed microelectronics. However, Kirk-effect-induced current blocking was observed, limiting the highest achievable current density and hence the speed. In this work, we present an explanation as to the cause of current blocking in the InP/GaAsSb DHBTs. The effects of collector thickness are investigated and methods to achieve higher current densities are proposed.



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