A “Snapshot” of AlGaN/GaN HEMT State-of-the-Technology

G. David Viaa, Steven C. Binarib, Dan JudyC

a  AirForce Research Laboratory, AFRL/SNDD, 2241 Avionics Circle, Wright-Patterson AFB, OH 45433

937.255.1874 x3457 Glen.Via@wafb.af.mil


b   Navel Research Laboratory, 4555 Overlook Avenue, S.W., Washington, DC 20375

202.404.4616 binari@nrl.navy.mil


c  US Army Research Laboratory, 2800 Powder Mill Road, Adelphi, MD  20783

301.394.3568 djudy@arl.army.mil


Keywords: AlGaN/GaN HEMT, device, testing, power



The Defense Advanced Research Projects Agency (DARPA) is currently sponsoring a Wide Band Gap Semiconductor Technology Initiative (WBGSTI).  The objective of this program, managed by Edgar Martinez and Mark Rosker, is four-fold:  (1) to scale (up to 4”) high quality SiC substrates, (2) to develop alternative substrates, (3) to develop uniform AlGaN/GaN High Electron Mobility Transistor (HEMT) expitaxial growth, and (4) to examine materials/device correlations.  This paper will present measured AlGaN/GaN HEMT device results that provide a snapshot of the State-of-the-Technology with respect to this DARPA program


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