A New Materials Base for Future Ultra High Power RF Elecgronics

E. Kohn, A. Aleksov, M. Kubovic, P. Schmid, J. Kusterer, M. Schreck*, M. Kasuo


Dept. Of Electron Devices and Caircuits, University of Ulm, D-89081 Ulm, Germany

e-mail: kohn@mailix.e-technik.uni-ulm.de, phone +49 731 50 26151

*Dept. Of Experimental Physics, University of Augsburg, D-86135 Augsburg, Germany

oNTT Basic Research Laboratories, NTT Corp., 3-1 Morinosato-Wakamiya, Atsugi 143-0198, Japan


Keywords: diamond semiconductor, high power / high temperature application



Diamond is an ideal semiconductor material for high power / high temperature electronic systems with active device structures and MEMS components.  Despite the difficult materials and device technology, individual transistor structures and passive components have been realized, allowing to extract first encouraging microwave performance data.  A critical issue is still the availability of single crystal substrates.  The state of the art of both groups of devices (active and passive) is reviewed together with the materials requirements for ultra high power RF applications.


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