A System for High Current Density Reliability Testing of HBT’s with in-situ Measurement

P. Chris Grossman, Kit Hayashibara, Quin Kan, Aaron Oki, Tom Block, Chuck Trucker, Randy Okamoto, Clay Cox, and Jeff Elliot

Northrop Grumman Space Technology, One Space Park, D1-1050B

Redondo Beach, CA  90278, chris.grossman@ngc.com, 310-812-2262


Keywords:  HBT, reliability, high current density



Space and other DoD systems require high reliability components, which will survive a long mission life.  Heterojunction Bipolar Transistors (HBTs) are key components in these systems.


NGST has developed a robust system for long tern testing of HBT’s at very high current densities (200-300 kA/cm2).  This test measures current enhanced degradation that may not appear with standard high temperature reliability screening methods.  The system is fully automated providing high current stress, with periodic comprehensive in-situ testing of all devices.


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