ecR Based Chemically Assisted Plasma Etching of GaAs

R.K. Bhardwaj, S.K. Angra, Lalit M. Bharadwaj, R.P. Rajpai

Central Scientific Instruments Organization, Sector -30 C

Chandigarh 160030 INDIA

Ph: 91-172-657811, Fax: 91-172-657267,657082

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Keywords: Plasma Etching, Chemical Assisted Plasma Etching



Etching of GaAs, when plasma of Ar gas is used and CF4/02 is directed fall on the wafer from another port in Electron Cyclotron Resonance (ecR) source in Chemically Assisted Ion Beam Etching (CAIBE) has been carried out. The plasma source was 2.45 GHz microwave source superimposed with mirror type magnetic field configuration to have resonance. Effect of CF4/02 /Ar ration and substrate bias on etching rate of GaAs and anisotropy of etched profile has been investigated. Etching processes consist of many etching parameters such as the component of radicals and ions in plasma flow of gases, source power, pressure, substrate bias etc. Get maximum high etch rate with use specific ration of gases CF4/02 and Ar, pressure 4x10-4 Torr, source power 700 W, substrate bias -30 V. Etched samples were characterized with Scanning Electron Microscope (SEM) and Dektek 3030ST from Veeco U.S.A



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