A super Ruggedness InGaP/GaAs HBT for GSM Power Amplifiers

Yuefei Yang, Byonguk In, Youchung Chen, Chanh Nguyen, Daniel Hou, Joe Zhou, Kevin Feng, Wing Yau and Dave Wang 
Global Communications Semiconductors, Inc.,
23155 Kashiwa Court, Torrance, CA  90505 
Phone: (310) 530-7274  Fax: (310) 530-7279  Email: yyang@gcsincorp.com

A 4W super ruggedness InGaP/GaAs HBT for GSM power amplifier applications is presented.  With improved epi-structure, layout and process, the device can be survived at 25:1 VSWR. To our knowledge, this is the highest ruggedness achieved for a 4W InGaP/GaAs HBT.  In addition, the device shows good power performance with typical 36 dBm output power, 18 dB linear gain and 64% PAE at 900 MHz and 35 dBm output power, 15 dB linear gain and 60% PAE at 1800 MHz, respectively.  This device is excellent candidate for not only GSM but also DCS/PCS PA applications. 

Keywords:  InGaP/GaAs HBT, power amplifiers, GSM, VSWR

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