A High-Performance 0.13um AlGaAs/InGaAs pHEMT Process Using Sidewall Spacer Technology

Andrew T. Ping, Wolfgang Liebl, Gerard Mahoney, Steve Mahon, Otto Berger
TriQuint Semiconductor, 2300 NE Brookwood Pkwy, Hillsboro, OR 97124,
Email: aping@tqs.com Phone: 503-615-9424

A robust and manufacturable high-performance 0.13 m gate length AlGaAs/InGaAs pseudomorphic High-Electron Mobility Transistor (pHEMT) process on 150 mm substrates is presented. This process, named TQP13, is unique in that the 0.13m gate lengths are achieved using cost effective I-line photolithography in conjunction with sidewall spacer technology. The process features a depletion-mode transistor with a nominal pi8nch-off voltage of -300 mV, on-resistance of 0.8 ohm-mm, extrinsic transconductance of 750 mS/mm, gate-to-drain breakdown voltage of 9 V, unity current gain cut-off frequency of 110 GHz(peak), maximum frequency of oscillation of >200 GHz, IDss of 900 mA/mm, and Imas(Vgs=+0.7 V) of 500 mA/mm. Passive components include 0.34 fF/m2 MIM capacitors, 105 ohm/square epitaxial resistors, precision 50 ohm/square NiCr resistors, and low-loss inductors using three levels of metallizations, two local and one airbridge. A wide variety of applications can be realized over a broad frequency range including low-noise amplifiers for consumer Direct Broadcast Satellite dish systems (Ku-band) and medium power amplifiers for automotive radar (W-band), for example.

Keywords: AlGaAs/InGaAs pHEMT, sidewall spacer technology

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