All i-Line Lift-Off T-Gate Process and Materials

Medhat A. Toukhy and Ping-Hung Lu 
AZ Electronic Materials USA Corp., 70 Meister Avenue, Somerville, NJ  08876 
Email:  Phone: (908) 429-3613 
Email: Phone: (908) 429-3549

An all i-line 0.22 um T-gate process is demonstrated.  A resist structure suitable for metal deposition and lift-off is constructed sequentially with two different resist materials.  The lithographic process is described in details in this paper.   

Keywords:  i-line, resist, T-gate, lift-off, GaAs

                                                12.2 pdf                       Return to TOC