Study of 1/f and 1/f2 for InP SHBT and DHBT

Kurt Cimino, Yue-ming Hsin*, S.C. Shen**, and Milton Feng 

Department of Electrical and Computer Engineering, University of Illinois, 1406 W. Green Street, Urbana, IL  61801

*Department of Electrical Engineering, National Central University, Chung-li Taiwan **School of Electrical and Computer Engineering, Georgia Institute of Technology, Atlanta, GA  Phone: (217) 333-4048  Email:

This work reports experimental data comparing the low frequency noise spectrum of InP based HBTs.  Double heterojunction device structures are examined with and without surface passivation ledges. 

Keywords:  HBT, Noise, 1/f, 1/f2

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