Stepper Based Sub-0.25m Process for mm-Wave Applications

William J. Roesch TriQuint Semiconductor, Inc.,
2300 N.E. Brookwood Parkway, Hillsboro, OR 97124-5300
Phone: (503) 615-9292 Fax: (503) 615-8903 Email:

The stepper based volume sub-0.25m GaAs pHEMT process utilized 5 inter-level metallizations and three dielectric layers for high frequency performance whilst maintaining the economies of scale of 150mm (6) diameter substrates. The process has recently been used to fabricate X-band and K-band MMICs, showing excellent performance and yield. The approach taken here with DUV stepper and 150mm wafer diameter will lead to a significant cost reduction for MMICs up to 30 GHZ.

Keywords: Stepper, volume, sub-0.25m, manufacturing, pHEMT, MMIC

3.1 pdf Return to TOC