Gate Leakage Current of AlGaN/GaN HEMTís Device Influenced by Substrate Defects

K. Matsushita, H. Sakurai, K. Takagi, H. Kawasaki, Y. Takada1) T.Sasaki1) and K. Tsuda1)
Microwave Solid-state Department Komukai Operation Toshiba Corp.,
1)Advanced Electron Devices Laboratory, Research and Development Center, Toshiba Corp
1,Komukai Toshiba-cho, Saiwai-ku, Kawasaki, 212-8581, Japan
Phone:+81-44-549-5282Fax: +81-44-548-5955

The gate leakage currents on the AlGaN/GaN HEMTs on 2-inch SiC epitaxial substrate are measured at Vgs=20 V. The defect image of the wafer observed by the optical surface analyzer and the photograph of fabricated devices on the wafer are superimposed.Comparing the gate leakage current map on the wafer,, the relation between the gate leakage current and the location of the defect is found clearly.††

Keywords:GaN, AlGaN, HEMT, defect, gate leakage current

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