SiC MESFET and MMIC Technology Transition to Production
Milligan, J. Henning, S.T. Allen, A. Ward, and J.W. Palmour
Significant progress has been made in the development of SiC MESFETs and MMIC power amplifiers manufactured on 3-inch high purity semi-insulating (HPSI) 4H-SiC substrates. MESFETs operating over 5000 at a TJ=140oC with no degradation are presented. Over two thousand high power SiC MMIC amplifiers have been fabricated with excellent yield and repeatability using our released second generation MMIC foundry process.
Keywords: SiC, MESFET, MMIC, HPSI, EW