High-Efficiency Amplifiers Using AlGaN/GaN HEMTs on SiC


Scott Sheppard, Bill Pribble, R. Peter Smith, Adam Saxler, Scott Allen, Jim Milligan and Ray Pengelly


Cree Inc., 4600 Silicon Dr., Durham, NC 27703

Scott_Sheppard@cree.com, Ph: (919) 313-5549, Fax: (919) 313-5696


Keywords:  GaN HEMT, RF, Class-E, high-efficiency, switch-mode




GaN HEMTs on SiC are applied to high-efficiency power amplifier designs. Several class-E hybrid power amplifiers based on the GaN HEMT cell were designed and tested. Around 2 GHz, the first amplifier provides 10 watts CW with associated PAE of 85% and gain of 12 dB. Other higher frequency designs with the same transistor cell provide 10 watts and 80% PAE centered around 2.8 GHz and also 10 watts and 76% PAE centered around 3.4 GHz. Also, a larger-periphery class-E amplifier operating at 2 GHz with a peak power of 63 watts and 75% PAE has been demonstrated using GaN HEMT technology.


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