Optimizing InGaP/GaAs HBT Technology for Distributed Amplifier Applications


Aroonchat Chatchaikarn, Wing Yau*, Yuefei Yang*, and G.P. Li


Integrated Nanosystems Research Facility, University of California, Irvine, CA 92697 and Global Communication Semiconductors, Inc*, Torrance, CA  90505, email: achatcha@uci.edu and gpli@uci.edu



Keywords: InGaP/GaAs HBT, MMIC, Distributed Amplifier, Manufacturability



   In this paper, the attributes of HBT device parameters to the performance of distributed amplifiers are evaluated.  In addition, the guidelines for optimizing InGaP/GaAs HBT technology for broadband amplifier designs are proposed.

and a 1% duty cycle. The power gain decreased to 8dB at 1GHz under CW conditions at a power density of 1.6W/mm (1W).


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