Optimizing InGaP/GaAs HBT Technology for Distributed Amplifier Applications
Keywords: InGaP/GaAs HBT, MMIC, Distributed Amplifier, Manufacturability
In this paper, the attributes of HBT device parameters to the performance of distributed amplifiers are evaluated. In addition, the guidelines for optimizing InGaP/GaAs HBT technology for broadband amplifier designs are proposed.
and a 1% duty cycle. The power gain decreased to 8dB at 1GHz under CW conditions at a power density of 1.6W/mm (1W).