The manufacture of optical components on
4-inch InP in a GaAs production fab
Youtsey, E. Beam, T. Chou, J. Jimenez, A. Ketterson, A. MacInnes, A. Mahajan,
P. Saunier and D.
Semiconductor, 500 W. Renner Road,
email@example.com, Phone: (972) 392-3152
4-inch InP, InAlGaAs DFB laser, mesa-based
high-speed photodetector, avalanche photodiode, APD, electron-beam patterned
components including multi-wavelength 1310-nm InAlGaAs DFB lasers and
high-speed mesa-based PIN and APD
photodetectors have been fabricated on 4-inch InP using standard production
tools in a GaAs manufacturing facility. There have been few published reports
on optical components fabricated on InP substrates of this size. The use of
production GaAs toolsets and processes for optical component fabrication are
shown to have important device cost, yield and performance advantages.
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