Preliminary Results from Phase II of the Wide Bandgap Semiconductor for RF Applications (WBGS-RF) Program


Mark Rosker1, Harry Dietrich2, Christopher Bozada3, Alfred Hung4 and Glen David Via5


1Defense Advanced Research Projects Agency (DARPA) / Microsystems Technology Office (MTO)

3701 North Fairfax Drive

Arlington, VA 22203-1714

(571) 218-4507; (703) 696-2206 (FAX)


2Office of Naval Research

ONR Headquarters

One Liberty Center Room 1173

875 North Randolph Street

Arlington, VA 22203-1995

(703) 696-0240; (703) 696-2611 (FAX)


3Air Force Research Laboratory

AFRL/SNDD Bldg. 620

2241 Avionics Circle

Wright-Patterson AFB, OH 45433-7322

(937) 255-4557 ext.3376; (937) 255-8656 (FAX)


4Army Research Laboratory


2800 Powder Mill Road

Adelphi, MD 20783-1179

(301) 394-2997; (301) 394-4576 (FAX)


5Air Force Research Laboratory

AFRL/SNDD Bldg 620

2241 Avionics Circle

Wright-Patterson AFB OH 45433-7322

(937) 255-1874 ext.3457; (937) 255-2306 (FAX)


Abstract This paper details the latest progress in the Wide Bandgap Semiconductors for RF Applications (WBGS-RF) program sponsored by the Microsystems Technology Office of the Defense Advanced Research Projects Agency (DARPA/MTO). While the first phase of WBGS-RF focused on semi-insulating substrates and epitaxial growth, this phase pushes new RF capabilities in wide bandgap device fabrication, showing improvements in  power-added efficiency, gain, bandwidth, power density and reliability of wide bandgap RF power devices. Although this report gives initial DC and RF test results from sample devices, further improvement is expected as this phase of the program progresses.


Keywords: GaN, SiC, substrate, power amplifier, HEMT


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