1 Department of
2 Department of
Materials Science and Engineering,
Several Gallium Nitride etching techniques are reviewed and compared. The GaN binary etching technique is selected and used for this experiment, the GaN profile after etching is measured with Dektak profilometer and AFM. Three types of GaN films such as intrinsic GaN, n-type GaN and p-type GaN have been used in the binary etching technique. The experiment results show that binary etching can be utilized for GaN wet etching with good control and precision at room temperature, and at higher temperatures, too.