27 GHz Flip-Chip Assembled pHEMT Oscillator


Yue-ming Hsin, Yu-An Liu, Che-ming Wang, Wei-kuo Huang and Tsung-Jung Yeh*


Department of Electrical Engineering, National Central University, Jhongli 32001, Taiwan

*WIN Semiconductors Corp. No. 69, Technology 7th Rd., Hwaya Technology Park

Kuei Shan Hsiang, Tao Yuan Shien, Taiwan

e-mail: yhsin@ee.ncu.edu.tw, Tel: +886-3-4227151 ext. 34468




Keywords: Flip-Chip, Oscillator, pHEMT, MIC




In this paper, we present a microwave integrated circuit (MIC) with flip-chip assembled 0.15mm-gate pHEMT. Single transistor (pHEMT of 475 mm from WIN Semiconductor) with negative resistance combined with resonant network was designed for Ka-band oscillator. After characterizing the 0.15mm-gate pHEMT, the passive components and CPW connection were designed and fabricated on Al2O3 substrate with consideration of bump transition. The measured output signal was at 27.55 GHz while biasing at VDS = 2 V and ID = 50 mA (VGS = -0.5 V), respectively. The measured signal output power is 1.87 dBm with consideration of cable loss. The corresponding phase noise is -84 dBc/Hz@1MHz offset. To our knowledge, this is the 1st flip-chip assembled pHEMT oscillator using feedback methodology at Ka-band.


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