High-Performance Metamorphic InP/GaAsSb/InP “Type-II” DHBTs

Grown on GaAs Substrates (Student Paper)


1)Y. Zeng,   1)H.G. Liu,   1)N.G. Tao,   and  1)C.R. Bolognesi,

2)W. Tang,   2)W. Zhou,   and 2)K.M. Lau


1)Compound Semiconductor Device Laboratory (CSDL), Simon Fraser University, 8888 University Drive

Burnaby BC, Canada, V5A 1S6     (E-mail : colombo@ieee.org / tel: 604-291-5964)


2)Dept. of Electrical & Electronic Engineering, HKUST

Clear Water Bay, Hong-Kong       (E-mail: eekmlau@ust.hk / fax: 852-2358-1485)    



Keywords: HBTs, Metamorphic Growth on GaAs Substrates, Type-II Band Alignment


     We report the fabrication of high-performance metamorphic (MM) InP/GaAsSb/InP DHBTs grown on GaAs substrates which show performances comparable or, in certain respects, superior to similar structures grown on InP substrates.  The emitter base junction non-ideality factor is found to be significantly higher in the MM devices when compared to the lattice-matched layers: this is believed related to a significantly rougher emitter base junction compared to layers grown lattice-matched on InP.  Current gain cutoff frequencies fT as high as 110 GHz have been achieved with a 30 nm base and a 200 nm collector.


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