Reliability of High-Speed Devices: Probing of Self-Heating with Nanosecond Time-Resolution

M. Kuball1, G.J. Riedel1, J.W. Pomeroy1, R. Simms1, A. Sarua1, M.J. Uren2, T. Martin2, K.P. Hilton2,

J.O. Maclean2, and D.J. Wallis2

1 H.H. Wills Physics Laboratory, University of Bristol, Bristol BS8 1TL, United Kingdom2 QinetiQ Ltd, Malvern, Worcs WR14 3PS, United Kingdom


Email:; Phone: +44 117 928 8734

Keywords: Thermography, Time-Resolved, Temperature, Transistors, GaN, Reliability



We report on the development of time-resolved thermography to measure device temperature with submicron spatial resolution and with time resolutions as short as 40 ns. This new technique is demonstrated on AlGaN/GaN electronic devices (transistors and ungated devices). Temperature determination of the devices is based on micro-Raman spectroscopy employing subbandgap nanosecond laser pulses. Heating and cooling cycles of AlGaN/GaN devices due to self-heating were measured in the device plane as well as three-dimensionally for different device layouts. We find device layout to affect thermal device time constants.


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