Ming-Yih Kao, Cathy Lee, Paul Saunier, Hua-Quen Tserng and Gary Christison
TriQuint Semiconductor, 500 W. Renner Road, Richardson, Texas 75080, USA Tel: (972) 994-3678, Fax: (972) 994-4537, Email: email@example.com
Keywords: AlGaN/GaN, HEMT, Ka-Band Power, Low-Noise, PAE, SiC
The development of recessed 0.25- m gate length AlGaN/GaN HEMTs on 3-inch SiC substrates for high power, high power-added efficiency (PAE) and low-noise applications at microwave and millimeter-wave frequencies will be presented. In this work, we have demonstrated 200- m wide GaN-based recessed HEMTs with PAE of 62, 57 and 41 percent at 10, 20 and 35 GHz, respectively. Furthermore, low minimum noise figures of 1.0 and 1.4 dB were achieved at 18 and 26 GHz, respectively, for 100-, 200-and 300- m gate-width devices. To the best of our knowledge, this is the first demonstration of GaN HEMTs with state-of-the-art noise and power performance simultaneously. We have developed GaN HEMTs with PAE, gain and noise performance similar to that of best reported GaAs-based pHEMTs but exhibiting 4-5 times of output power densities of pHEMTs.