Benjamin F. Chu-Kung, Kurt Cimino, Yu-Ju Chuang, Mark Stuenkel, and Milton Feng Department of Electrical and Computer Engineering · University of Illinois Micro and Nanotechnology Laboratory · 208 N. Wright Street · Urbana, IL 61801 Phone: (217)244-3662, e-mail: email@example.com
A. Wibowo, G. Hillier, and N. Pan Microlink Devices · 6457 Howard Street · Niles, IL 60714
KEYWORDS: HBT, GaAs, InGaP, Noise, SHBT
InGaP/GaAs SHBTs have been fabricated and the device RF and noise performance has been measured. A small-signal model has been created from the S-parameters of the measured devices. Thermal and shot noise is added to create a first generation noise model, which shows good agreement with measured data. The devices (L=3x12 µm2) showed an FMIN = 1.68 dB at6 GHz for VCE =1.8 V and IC= 1.56 mA.