P. Abele, F. Bourgeois, J. Splettstoesser, and D. Behammer
United Monolithic Semiconductors GmbH, Wilhelm-Runge-Strasse 11, D-89081 Ulm, Germany
Phone: +49-731-505-3093, FAX: +49-731-505-3005, E-mail: email@example.com
Keywords: GaAs, pHEMT, sub-threshold, breakdown, buffer, epitaxy
In this work we present the influence of the buffer on the drain leakage current and breakdown voltage of Al0.25Ga0.75As/In0.20Ga0.80As/Al0.25Ga0.75As double recessed pHEMTs. Three different types of buffers were investigated: a 50 nm thick In0.52Ga0.48P layer, a binary AlAs/GaAs super lattice, and a ternary Al0.60Ga0.40As/GaAs super lattice. For the latter the thickness of the first Al0.60Ga0.40As layer was also varied. The measurements of the drain leakage current and breakdown voltage are presented and discussed.