Influence of the Epitaxy on the Sub-Threshold Drain Leakage Current and the Breakdown Voltage for GaAs pHEMTs

P. Abele, F. Bourgeois, J. Splettstoesser, and D. Behammer

United Monolithic Semiconductors GmbH, Wilhelm-Runge-Strasse 11, D-89081 Ulm, Germany

Phone: +49-731-505-3093, FAX: +49-731-505-3005, E-mail:

Keywords: GaAs, pHEMT, sub-threshold, breakdown, buffer, epitaxy


In this work we present the influence of the buffer on the drain leakage current and breakdown voltage of Al0.25Ga0.75As/In0.20Ga0.80As/Al0.25Ga0.75As double recessed pHEMTs. Three different types of buffers were investigated: a 50 nm thick In0.52Ga0.48P layer, a binary AlAs/GaAs super lattice, and a ternary Al0.60Ga0.40As/GaAs super lattice. For the latter the thickness of the first Al0.60Ga0.40As layer was also varied. The measurements of the drain leakage current and breakdown voltage are presented and discussed.

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