Gain Enhancement of Junction PHEMT Power Amplifiers for Cellular Phones

Kazuki Nomoto, Koichi Hirata, and Mitsuhiro Nakamura

MMIC Development Section, LSI Device Engineering Department, Sony Semiconductor Kyushu Corporation, Kagoshima Technology Center, 5-1, Kokubu Noguchi-kita, Kirishima-shi, Kagoshima, 899-4393 Japan

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Keywords: JPHEMT, Power Amplifier, Gain, PAE, Recess Cgd


In this paper, we report a significant gain enhancement of juntion pseudomorphic high electron mobility transistors (JPHEMTs) for wideband code division multiple access (W-CDMA) power amplifiers (PAs).  By employing a novel device design characterized by a gate-drain recessed structure, gate gold plating, and optimized device parameters such as doping concentration and barrier layer thickness in the epitaxial structure, a 3.0 dB gain enhancement was achieved with 52% power added efficience (PAE) at a 17.2 dBm output power (Pout), a-40 dBc adjacent channel leakage power rtin (ACPR), and a supply voltage 3.5 V in a 1.95 GHz W-CDMA class-AB operation.  This novel device was developed by making changes and improvements toour existing mass production technology, the Microwave Monolithic Integrated Circuit (MMIC) process.

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