Etienne Menard1,*, Christopher A. Bower1, Joseph Carr1 and John A. Rogers1,2
1Semprius, Inc., 2530 Meridian Pkwy., Durham, North Carolina 27713, USA
2Dept. of material Science and Engineering, Seitz Materials Research Laboratory, Beckman Institute for Advanced Science and technology, University of Illinois at Urbana-Champaign, Urbana, IL 61801, USA
* email: firstname.lastname@example.org, phone: (217) 244-1061
Keywords: transfer printing, micro-structured semiconductors, heterogeneous integration
We present a recently invented approach to combine broad classes of dissimilar materials into heterogeneously integrated (HGI) electronic systems with two or three dimensional (3D) layouts. We have developed a process, called transfer printing, to transfer high performance semiconductor materials such as silicon, gallium arsenide, gallium nitride, indium phosphide onto rigid or flexible substrates. One of the objectives of this approach is to enable the fine-scale integration of compound semiconductors (CS) with standard silicon-based integrated circuit technologies, eg. CMOS, to develop high performance HGI electronics systems on rigid or flexible substrates.
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