SiCED Electronics Development GmbH & Co. KG, a Siemens Company Günther-Scharowsky-Str. 1, D-91058 Erlangen; GERMANY Email : firstname.lastname@example.org Phone +49 9131 734894 Fax +49 9131 723046
Keywords: Silicon Carbide, MOSFET, JFET, Annealing, Contacts
The paper discusses important challenges in manufacturing silicon carbide based power devices on an industrial scale. Special emphasize is paid to processes which differ considerably from well know silicon power device process flows. The main topics discussed in the contribution are processes for annealing ion implanted species, the formation of ohmic contacts as well as the crucial question of forming high quality interfaces between SiC and insulating materials for MOS based power devices structures.