Nelson Chen, Scotie Lin, C.K. Lin, Wen Chu, Paul Yeh, H.C. Chou, Joe Liu and C.S. Wu
WIN Semiconductors Corporation
No.69, Technology 7th Rd, Hwaya Technology Park,
Kuei Shan Hsiang, Tao Yuan Shien, Taiwan333
Phone: +88633975999 ext.1259, Email: email@example.com
Keywords: KGD, Breakdown, Yield, pHEMT
WIN’s 0.15um power pHEMT technology has been popularly used by customers to design and produce Ka to Vband power amplifier MMICs. It is a robust production technology that produces high performance and high yield PA products. The functional yield is usually high; average Ion/off and breakdown voltage yield are over 75 even for the output power of 46W at Ka-band with total gate periphery over 10mm. However, in one particular case, one of the milli-meter-wave high power PA circuits was characterized by relatively circuit yield. This was attributed to a requirement of stringent circuit specification of DC/RF characteristics for this special circuit. To improve the circuit yield, both epitaxial structure and wafer process require a more precise and better control.
At WIN, we have statistically analyzed and correlated the data among circuits, epitaxial material and process. With very concise nd elaborate statistical data analysis and physical understanding on all parameters, including circuits, epitaxial material and process, we have made a significant improvement of circuit yield. In this paper, we will present our statistical analytical approach and data analysis that leads to a significant improvement of a 0.15um high power pHEMT circuit yield.