Design and Fabrication of a Compact GaAs IPD Balun

Jon Abrokwah, Qiang Li, Lianjun Liu, Shahin Farahani‡, Dan Miller‡,Jyoti Mondal, Adolfo Reyes‡‡ and Jim Cotronakis‡‡
Technology Solutions Organization, Freescale Semiconductor Inc
2100 E. Elliot Rd, Tempe, AZ 85284.Telephone (480) 413-3319, Email:
‡Transportation Systems Product Group, Freescale Semiconductor Inc, Tempe, Arizona
‡‡Tempe Fab, Freescale Semiconductor Inc, Tempe, Arizona
++Wireless and Mobile Systems Group, Chicago, Illinois

Keywords: Integrated Passive Devices (IPD), balun, front end module components

Radio transceiver modules continue to shrink in size and cost, requiring novel approaches for integration of the numerous passive elements of the radio front-end. A center-tapped, 4:1 impedance transformed balun was designed and fabricated based on a GaAs Integrated Passive process for application to the 2.4 GHz ISM band. Die level glob topped results showed trade-offs in insertion loss and harmonic rejections based on changes of the input and output capacitance. Measured insertion loss of 0.91 dB, 2nd and 3rd harmonics of 12 dB and 23.7 dB, and common mode rejection ratio 25.7 dB were realized with the nominal design.
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