Novel AlGaN/GaN Field-Effect Diode with a Low Turn-on Voltage Operation
using Fluoride-Based Plasma Treatment
|Keywords: AlGaN/GaN, FESBD, Fluoride-based Plasma, RIE,
The fabrication and I-V characteristics of the novel AlGaN/GaN field effect diode are reported. This diode has a distinguishing anode structure and the relatively thick AlGaN barrier layer in contrast a conventional field-effect Schottky barrier diode (FESBD). By using fluoride-based plasma treatment, we could reduce its turn-on voltage to 0 V and decrease its leakage current at the reverse voltages.
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