Nano-scale Type-II InP/GaAsSb DHBTs to Reach THz Cutoff Frequencies

William Snodgrass and Milton Feng
University of Illinois at Urbana-Champaign, 208 North Wright Street, Urbana, IL 61801 (217) 333-8080

Keywords: Indium Phosphide, Heterojunction Bipolar Transistor, Terahertz, Scaling

We demonstrate vertically and laterally scaled GaAsSb/InP type-II DHBTs with fT = 670 GHz at 10.3 mA/μm2 emitter current density and off-state collector-emitter breakdown voltage BVCEO = 3.2 V. Small-signal modeling is used to extract delay terms and to identify material design and device fabrication requirements for next-generation devices with > 1 THz cutoff frequencies.
                                                           14.2 PDF                                       Return to TOC