Nano-scale Type-II InP/GaAsSb DHBTs to Reach THz Cutoff Frequencies
|Keywords: Indium Phosphide, Heterojunction Bipolar
Transistor, Terahertz, Scaling
We demonstrate vertically and laterally scaled GaAsSb/InP type-II DHBTs with fT = 670 GHz at 10.3 mA/μm2 emitter current density and off-state collector-emitter breakdown voltage BVCEO = 3.2 V. Small-signal modeling is used to extract delay terms and to identify material design and device fabrication requirements for next-generation devices with > 1 THz cutoff frequencies.
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