Process Development and Characteristics of Nano III-V MOSFET

Donald Cheng, Chichih Liao, K.Y. Cheng, Milton Feng
Department of Electrical and Computer Engineering, University of Illinois
Micro and Nanotechnology Laboratory 208 N. Wright Street Urbana, IL 61801
Phone: (217)244-3662, e-mail:

Keywords: III-V MOSFETs, epitaxy, aluminum oxide
The compound semiconductor channel materials have recently drawn great attention because of their potential to solve the upcoming Si MOSFETs scaling problem and become the next generation high-speed, low-power devices. In this work we review the latest silicon technology and report the process development of submicron III-V MOSFETs. A new approach has been demonstrated to overcome the high interface density of states between gate dielectric and channels by applying an interface-control-layer. The proposed design and results show promise for realizing compound semiconductor based MOSFETs
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