Dry Etch Development for a Dual, Front and Backside, processing of II-VI Compound Semiconductors

A.J. Stoltz, P. R. Norton
Night Vision and Electronic Sensors Directorate, 10221 Burbeck Road, Ft. Belvoir, VA 22060
A set of methods were developed to allow for dual-side plasma processing of the electro-optical II-VI compound semi-conductor HgCdTe. Conventionally, HgCdTe is processed on a single side. The dual side processing of HgCdTe is an enabler to produce detectors beyond the complexity of the current state of the art. The research performed has allowed innovations in wafer bonding methods, substrate removal, infrared mask aligning methods, and new plasma processes. These innovations will allow the productions of infrared detectors and other electro-optical detector designs.
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