P. Abele, F. Bourgeois, M. Lanz, J. Grünenpütt, R. Behtash, J. Thorpe and D. Behammer
United Monolithic Semiconductors – GmbH, Wilhelm-Runge-Strasse 11, D-89081 Ulm, Germany Phone: +49-731-505-3093, Fax: +49-731-505-3005, E-mail: firstname.lastname@example.org
Keywords: On Wafer Reliability, GaAs pHEMT, GaN HEMTS, RF Stress
This paper describes an on wafer reliability test set to stress transistors under RF conditions. The setup provides a thermo chuck and a mechanical tuner at the output of the transistor under test. With this configuration, transistor degradation due to the effects of different load lines can be determined. Initial results from tests done on GaAs pHEMTs and GaN HEMTs are presented.
Return to TOC