Influence of SiC Substrate Misorientation on AlGaN/GaN HEMTs Performance

K. Matsushita, H. Sakurai, S. Teramoto, J. Shim, H. Kawasaki, K. Takagi, Y. Takada (1) and K. Tsuda (1)

Microwave Solid-state Department Toshiba Corp. 1) Advanced Electron Devices Laboratory, Research and Development Center, Toshiba Corp. 1, Komukai Toshiba-cho, Saiwai-ku, Kawasaki, 212-8581, Japan Phone +81-44-549-5282, Fax +81-44-548-5955, e-mail:

Keywords:GaN, AlGaN, HEMT, SiC, Reliability

AlGaN/GaN HEMTs devices are fabricated on 3-inch SiC misoriented substrates. The misorientation angle, as measured from the wafer surface normal to the axis perpendicular to the (0001) c-plane, is varied from 0.06° to 0.47°. The surface morphology and wafer crystalline quality were investigated by using AFM and PL. Analysis of the data reveals the relationships between the SiC substrate misorientation and both the physical characteristics of the grown epi layer and the performance of the fabricated device.

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