Wide Bandgap GaN Smart Power Chip Technology

King-Yuen Wong1, Wanjun Chen1, 2, and Kevin J. Chen1, *

1Department of Electronic and Computer Engineering, Hong Kong University of Science and Technology, Clear Water Bay, Kowloon, Hong Kong *eekjchen@ust.hk (Tel.: 852-23588969) 2State Key Laboratory of Electronic Thin Films and Integrated Devices, University of Electronic Science and Technology of China, Chengdu 610054, China

Keywords: Wide Bandgap, GaN, smart power, power converter, voltage reference and planar integration


Smart power chip technology has been realized on the GaN-on-Si platform, featuring monolithically integrated power devices, digital and analog functional blocks. In particular, this paper presents the imperative analog functional block – the voltage reference generator for smart power applications with wide-temperature-range stability. These circuits are shown to be capable of proper functions from room temperature up to 250 oC. The optimized voltage reference generator achieved less than 70 ppm/oC drift. It can be used to create a reference voltage for various biasing and sensing circuits.


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