Fabrication Process and 110 GHz Measurement Result of MS-to-CPW RF-Via Transition for RF-MEMS Devices Packaging Applications

Li-Han Hsu1, 2, Wei-Cheng Wu1, 2, Edward Yi Chang1, Herbert Zirath2, Yun-Chi Wu1, and Chin-Te Wang1 and Szu-Ping Tsai1

  1. Department of Materials Science and Engineering, National Chiao Tung University, Hsinchu 300,Taiwan. (e-mail: edc@mail.nctu.edu.tw). Phone number: +886-3-5712121-52971

  2. Microwave Electronics Laboratory, Department of Microtechnology and Nanoscience, MC2, Chalmers University of Technology, Göteborg SE-412 96, Sweden. (e-mail: lihan@chalmers.se) Phone number: +46-3-177-236-603

Keywords: Packaging, Fabrication, Microstrip, Microelectromechanical device, Millimeter-wave

This paper presents the fabrication process of RF-via (0-level) and flip-chip bump (1-level) transitions for applications of packaging MS (microstrip) RF-MEMS devices. The interconnect structure with MS-to-CPW transition between GaAs MEMS substrate and Al2O3 motherboard was in-house fabricated. A novel fabrication process for RF-MEMS packaging is in detail. After fabrication, the samples were measured up to 110 GHz using on-wafer probing measurement. From the measured results, the insertion loss of entire interconnect structure is better than -2 dB up to 100 GHz, documenting the feasibility for millimeter-wave RFMEMS devices packaging applications.

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