M. Hosch1*, J. W. Pomeroy2, A. Sarua2, M. Kuball2, H. Jung3, and H. Schumacher1
1Institute of Electron Devices and Circuits, Ulm University, Albert-Einstein-Allee 45, 89081 Ulm, Germany 2H.H. Wills Physics Laboratory, University of Bristol, Tyndall Avenue, Bristol BS8 1TL, United Kingdom 3United Monolithic Semiconductors GmbH, Wilhelm-Runge-Strasse 11, 89081 Ulm, Germany *e-mail: firstname.lastname@example.org, phone: +49-731-50-31581, fax: +49-731-50-31599
Keywords: GaN HEMT, Self-Heating, Device Simulation
In this work, we investigate the self-heating behaviour of high-power AlGaN/GaN HEMTs. Micro-Raman thermography measurements were carried out to determine the device temperature at different power and applied voltage levels. We found that drain voltage influences the device temperature distribution when the dissipated power is kept constant by applying a gate bias. This effect was then investigated and explained by use of numerical electro-thermal device simulations.