Bulk Growth of GaN by HVPE

H.Ashraf*1, R.Kudrawiec2, J. Misiewicz2, P.R.Hageman1 1Applied Material Science, Institute for Molecules and Materials, Radboud University Nijmegen, Toernooiveld 1, 6525 ED Nijmegen, The Netherlands 2 Institute of Physics, Wrocław University of Technology, Wybrzeże Wyspiańskiego 27, 50-370 Wrocław, Poland. Corresponding author E-mail: h.ashraf@science.ru.nl +31-24 -3653432.

Keywords: GaN, HVPE, Dislocation density, Thermal stress.


Bulk like GaN material (~3mm) was grown on the free standing (FS) GaN layers by hydride vapor phase epitaxial (HVPE). FS-GaN layers were obtained as a result of high thermal stress built up between sapphire substrate and the GaN layer during the cooling down step, which resulted in spontaneous lift off of the GaN layers. Bulk like GaN grown on FS-GaN exhibited good structural and optical quality and the dislocation density was in range of 105-106 cm-2.

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