Device Technology Based on New III-N Heterostructures

Masaaki Kuzuhara

Graduate School of Engineering, University of Fukui 3-9-1 Bunkyo, Fukui 910-8507, Japan Email: Phone: +81-776-27-9714

Keywords: GaN, FET, heterojunction, millimeter-wave, power transistor


III-nitride electron devices are attracting considerable attention for wireless communication equipments and power electronics systems. This paper describes some of the future technological challenges to further improve high frequency power performance of nitride-based heterojunction FETs. Also described are new applications which may be exploited by the development of millimeter-wave power transistors based on new III-nitride heterostructures, including AlInN/InGaN and AlInN/InN.

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