Low Threshold Current Density InAs Quantum Dash Lasers on InP Using DoublE Cap Technique
D. Zhou1,2, B.O. Fimland1, R. Piron2, O. Dehaese2, F. Grillot2 and S. Loualiche2
1. Dept. of Electronics and Telecommunications, NTNU, Trondheim, NO-7491, Norway
2. UMR-FOTON, INSA-Rennes, 20 Avenue des Buttes de Coësmes, 35043 Rennes, France
Keywords: Quantum dash laser, Molecular beam epitaxy
Low threshold current density InAs quantum dash lasers is demonstrated by reducing the energy inhomogeneous broadening through an optimized double cap technique. A threshold current density for infinite cavity length of 225 A/cm2 (~ 45 A/cm2 per stack) is obtained from 5-stack laser structure. The characteristic temperature of 52 K is measured in the temperature range between 25 and 70 °C.