Impact of gate metal fringe removal on small signal RF gain of AlGaN/GaN HEMTs


R. Behtash1, J.R. Thorpe1, S. Held1, D. Schrade-Köhn2, H. Blanck1

1United Monolithic Semiconductors, Wilhelm-Runge-Strasse 11, 89081 Ulm, Germany

2University of Ulm, Institute of Electron Devices and Circuits, 89081 Ulm, Germany Tel.: +49 731 505 3077


Keywords: AlGaN/GaN HEMTs, small signal gain, RF gain



In this paper a simple and applicable process step to improve the small signal RF gain of AlGaN/GaN-HEMTs is presented. By removing the gate metal fringes at the gate head of the devices the gain drain capacitance is reduced by an average of 30% at VDS=40V. This results in an averaged gain improvement of 1.5dB at 10GHz. The presented process step can be easily implemented in an existing process flow.



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