N-Face GaN-Based Microwave Metal-Insulator-Semiconductor High Electron
Mobility Transistors by Plasma-Assisted Molecular Beam Epitaxy
Keywords: GaN, N-face, AlN, molecular beam epitaxy (MBE), high electron mobility transistor (HEMT), microwave ower
This work investigates the use of N-face GaN-based eterostructures as a promising approach to overcome erformance limitations commonly encountered in Gaface lGaN/GaN HEMTs as their frequency of operation _x0t0e0nd1s_ iGntaoN ,t hwei thm iitlsli mreevteerrs-ewda dveir acntido nb oefy opnodla. riNza-ftaiocne ompared to that of the Ga-face (0001), are well-suited or designing new device structures that address the roblems f poor electron confinement and high ohmic ontact resistance in highly-scaled GaN transistors. The abrication and characterization of two N-face MISHEMT tructures by plasma-assisted MBE are resented. The devices demonstrated good RF erformance at 4 GHz, with the highest continuous-wave utput power density and power-added efficiency xceeding 8 W/mm and 70%, respectively. At 10 GHz, an utput power density and power-added efficiency of 4.2 /mm and 49%, respectively, were achieved.