High Breakdown Voltage AlGaN/GaN HEMTs Employing Recessed Gate Edge
Keywords: High Breakdown voltage, Recessed gate edge structure, AlGaN/GaN HEMT
We have proposed and fabricated a new AlGaN/GaN high electron mobility transistor (HEMT) employing the recessed gate edge structure. The breakdown voltage and the leakage current of the new AlGaN/GaN HEMT was improved due to reduced electric field concentration at the gate edge. The breakdown voltage of the proposed device was 1160 V while that of the conventional device was 962 V. The leakage current of the proposed device was 1 order less than that of conventional device. The forward characteristic of proposed device is slightly degraded due to the decrease of 2DEG density.