High Breakdown Voltage AlGaN/GaN HEMTs Employing Recessed Gate Edge



Minki Kim, Young-Hwan Choi, Jiyong Lim, Young-Shil Kim, Ogyun Seok and Min-Koo Han

School of Electrical Engineering and Computer Science, Seoul National University, Repulic of Korea

mkh@snu.ac.kr, kmk@emlab.snu.ac.kr , 82-2-880-7254,82-2-872-7992,


Keywords: High Breakdown voltage, Recessed gate edge structure, AlGaN/GaN HEMT



We have proposed and fabricated a new AlGaN/GaN high electron mobility transistor (HEMT) employing the recessed gate edge structure. The breakdown voltage and the leakage current of the new AlGaN/GaN HEMT was improved due to reduced electric field concentration at the gate edge. The breakdown voltage of the proposed device was 1160 V while that of the conventional device was 962 V. The leakage current of the proposed device was 1 order less than that of conventional device. The forward characteristic of proposed device is slightly degraded due to the decrease of 2DEG density.


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