Silicon Carbide Micro/Nano-Systems for Extreme Environment


Fang Liu and Roya Maboudian

Department of Chemical Engineering

University of California, Berkeley, CA 94720, USA



A number of industries such as automotive, health and energy require micro-sensors and actuators that can survive harsh environments, such as high temperatures, pressures and relative humidity. However, the materials properties of silicon impose limitations on its use in harsh environment and demanding applications. Silicon carbide (SiC) is an alternative semiconducting material that enables such applications because of its wider bandgap and higher melting/sublimation temperature, elastic modulus, fracture toughness, hardness, chemical inertness, and

thermal conductivity.


This presentation will discuss recent advances in SiCbased microelectromechanical systems (MEMS) for harsh environment sensors. It will cover singleprecursor chemical vapor deposition to obtain doped polycrystalline 3C-SiC (polySiC) thin films, selective reactive ion etching of SiC to pattern the deposited films, surface micromachining technology to fabricate a variety of MEMS devices, and metalpolySiC contact properties.



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