High Output Power Density and Low Leakage Current of InGaN/GaN Nanorod

Light Emitting Diode with Mechanical Polishing Process


Liang-Yi Chen, Ying-Yuan Huang, Chun-Siang Chang and JianJang Huang*

Graduate Institute of Photonics and Optoelectronics, National Taiwan University,

1, Roosevelt Road, Section 4, Taipei, 106, Taiwan

Phone:+886-2-3366-3534, Fax:+886-2-2367-7467, E-Mail: jjhuang@cc.ee.ntu.edu.tw


Keywords: Nanorod ,GaN, LED, CMP



We improve our fabrication of nanorod LED with mechnical polishing method. Our nanorod LED can achieve 6807mW/cm2 of output power density at 32A/cm2 of injection current density. The reversed-bias leakage current has also been reduced to nA level with the mechanical polishing process. Moreover, the investigation of the droop effect for such a nanorod LED array reveals that junction heating is responsible for the sharp decrease at the low current.


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