Failure Investigations on AlGaN/GaN HEMTs for Different Sheet Resistances

by Means of Raman Thermography


Helmut Junga, Michael Hoschb, Reza Behtasha, James R. Thorpea, Franck Bourgeoisa, Stefanie Helda,

Hervé Blancka, Andrei Saruac, Nicole Killatc, Martin Kuballc, and Thomas Roedled

a United Monolithic Semiconductors GmbH, Wilhelm-Runge-Straße 11, 89081 Ulm, Germany

b Institute of Electron Devices and Circuits, Ulm University, Albert-Einstein-Allee 45, 89081 Ulm, Germany

c H.H. Wills Physics Laboratory, University of Bristol, Bristol BS8 1TL, United Kingdom.

d NXP Semiconductors, Gerstweg 2, 6534 AE Nijmegen, The Netherlands

Helmut.Jung@UMS-Ulm.de, Phone: +49 7315053090


Keywords: AlGaN/GaN HEMTs, power devices, thermal management, reliability




Blow up investigations on GaN HEMTs were performed. It is shown that the blow up power and the related device temperature limit depends on applied source-drain voltages

and the sheet resistance of the 2DEG in the device.




16.3  PDF                     Return to TOC