Flip-Chip Assembled 7 GHz Ultra-Low Phase-Noise InGaP HBT Oscillator


Li-Han Hsu1,2, Dan Kuylenstierna2, Herbert Zirath2, Edward Yi Chang1, and Chin-Te Wang 1

1. Department of Materials

Science and Engineering, National Chiao-Tung University, Hsinchu 300,

Taiwan. (e-mail: edc@mail.nctu.edu.tw).

Phone number: +886-3-5712121-52971

2. Microwave Electronics

Laboratory, Department of Microtechnology and Nanoscience, MC2, Chalmers

University of Technology, Göteborg SE-412 96, Sweden.

(e-mail: lihan@chalmers.se)

Phone number: +46-3-177-236-603


Keywords: Flip-chip, Interconnection, MMIC, Oscillator, Phase noise, Microwave.



This paper reports on a flip-chip assembled 7 GHz ultra-low phase-noise GaAs InGaP heterojunction bipolar transistor (HBT) monolithic microwave integrated circuit (MMIC) oscillator. The cross-coupled oscillator was flip-chip bonded to an in-house fabricated Al2O3 carrier with patterns optimized for low-loss transitions. After flip-chip, the phase noise of the crosscoupled InGaP HBT oscillator was improved due to an increased Q-factor of the resonant tank. An ultra-low phase-noise of -112 dBc/Hz @ 100 kHz offset and -128 dBc/Hz @ 1 MHz offset with a high output power of 7 dBm at 7 GHz was achieved. To our best knowledge, this is the lowest phase noise reported for a flip-chip assembled oscillator.



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