LED Structures Grown on 200 mm Diameter Sapphire and Silicon Substrates


R. Schreiner, A.R. Boyd, O. Rockenfeller, J. Kaeppeler, B. Schineller, M. Heuken

AIXTRON AG, Kaiserstrasse 98, D-52134 Herzogenrath, Germany



Keywords: MOCVD, CCS, GaN, Crius, Argus, GaN on Silicon.




This paper reviews results from growing LED structures on 200 mm sapphire and (111) silicon in a single wafer configuration Crius® Close Coupled Showerhead (CCS) reactor. By maintaining good temperature uniformity throughout the process state of the art uniformities were achieved on both substrate materials, including a PL peak wavelength at ~470 nm with standard deviation of _ ~1 nm for an MQW grown on (111) Silicon.




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